منابع مشابه
Electronics below 10 Nm
This chapter reviews prospects for the development and practical introduction of ultrasmall electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs), as well as new concepts for nanometer-scalable memory cells. Physics allows silicon FETs to be scaled down to ∼3 nm gate length, but below ∼10 nm the devices are extremely sensitive to minute (su...
متن کاملLithographically fabricated optical antennas with gaps well below 10 nm.
Metal nanostructures that effi ciently capture or radiate electromagnetic waves at optical frequencies offer a means to concentrate electromagnetic energy into deep subwavelength regions. Wessel noted that these structures can therefore be considered antennas. [ 1 ] Recent work has focused on more effi cient designs, termed ‘optical antennas’, which employ small gaps or very sharp tips. [ 2–4 ]...
متن کاملDoes chlorine peroxide absorb below 250 nm?
Low-lying singlet and triplet electronic excited states of ClOOCl are presented. Calculations of the excitation energies and oscillator strengths are reported using excited state coupled cluster response methods, as well as the complete active space self-consistent field method with the full Breit-Pauli spin-orbit operator. These calculations predict that for ClOOCl there should be a weakly abs...
متن کاملPhonon dominated heat conduction normal to Mo/Si multilayers with period below 10 nm.
Thermal conduction in periodic multilayer composites can be strongly influenced by nonequilibrium electron-phonon scattering for periods shorter than the relevant free paths. Here we argue that two additional mechanisms-quasiballistic phonon transport normal to the metal film and inelastic electron-interface scattering-can also impact conduction in metal/dielectric multilayers with a period bel...
متن کاملDiode-pumped Nd:YAG laser emitting at 899 nm and below.
We present what is, to the best of our knowledge, the first diode-pumped Nd:YAG laser emitting at 899 nm and below, based on the (4)F(3/2) - (4)I(9/2) transition, generally used for a 946 nm emission. A power of 630 mW at 899 nm has been achieved in cw operation and 16 mW at 884 nm with a fiber-coupled laser diode emitting 9 W at 808 nm. Intracavity second-harmonic generation in cw mode has als...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1990
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.102772